TSM900N06CH X0G
Manufacturer:
Taiwan Semiconductor
Mfr.Part #:
TSM900N06CH X0G
Datasheet:
Description:
MOSFETs TO-251 Through Hole N-Channel number of channels:1 25 W 60 V Continuous Drain Current (ID):11 A 9.3 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 1 year ago) |
| Power Dissipation | 25 W |
| Number of Channels | 1 |
| Input capacitance | 500 pF |
| Continuous Drain Current (ID) | 11 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 9.3 nC |
| Drain to Source Resistance | 76 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 1 year ago) |
| Gate to Source Threshold Voltage | 1.2 V |
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